4.8 Article

High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

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ADVANCED MATERIALS
卷 27, 期 11, 页码 1912-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201405116

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资金

  1. Defense Threat Reduction Agency [HDTRA1-14-1-0030, HDTRA1-10-1-0098]
  2. Office of Naval Research (ONR) [N000141210556]
  3. National Science of Foundation [CMM-1265834]
  4. Nebraska Public Power District through Nebraska Center for Energy Sciences Research
  5. Directorate For Engineering
  6. Div Of Civil, Mechanical, & Manufact Inn [1265834] Funding Source: National Science Foundation

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Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of 1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.

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