Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires

Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures. A self-oscillating growth phenomenon of catalyst droplets, consuming surface-coating a-Si/a-Ge bilayer, is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge (c-Si/c-Ge) nano-slates, with Ge-rich layer thickness of 14-19 nm, embedded within a superlattice nanowire structure, with pre-known position and uniform channel diameter. A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to similar to 6 nm thick, without the use of any expensive high-resolution lithography and growth modulation control. A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics. It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics, or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.

Automated summary

In this study, a self-oscillating growth phenomenon of catalyst droplets was utilized to achieve high-frequency alternating growth of ultrathin crystalline Si and Ge nano-slates. A subsequent selective etching process generated ultrafine standing c-Si nanosheets. This method doesn't require expensive lithography and growth control.