InSe-Te van derWaals heterostructures for current rectification and photodetection

As the basis of modern electronics and optoelectronics, high-performance, multi-functional p-n junctions have manifested and occupied an important position. However, the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers. The heterojunction constructed by two-dimensional (2D) materials can significantly improve the device performance compared with traditional technologies. Here, we report the InSe-Te type-II van der Waals heterostructures with rectification ratio up to 1.56 x 10(7) at drain-source voltage of & PLUSMN; 2 V. The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power. Moreover, the heterojunction has stable photo/dark current states and good photoelectric switching characteristics. Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.

Automated summary

The InSe-Te type-II van der Waals heterostructure based on 2D materials has high performance and multi-functionality, exhibiting a rectification ratio of up to 1.56 x 10(7) at a drain-source voltage of ±2 V. This heterojunction shows photovoltaic and photoelectric effects under different laser wavelengths and densities, with high photoresponsivity and detectivity under low irradiated light power. Additionally, it demonstrates stable photo/dark current states and good photoelectric switching characteristics, providing a new pathway for future electronic and optoelectronic devices.