4.8 Article

Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes

期刊

ADVANCED MATERIALS
卷 28, 期 22, 页码 4441-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501828

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资金

  1. Samsung Electronics
  2. Air Force Office of Scientific Research [FA9550-15-1-0106]
  3. MSIP (Ministry of Science, ICT, and Future Planning), Korea, under the IT Consilience Creative Program [NIPA-2014-H0201-14-1001]
  4. Taiwan National Science Council [102-2917-i-002-087]
  5. Marie Curie Fellowship, TECNIOSPRING

向作者/读者索取更多资源

Mechanically durable stretchable transistors are fabricated using carbon nanotube electrical components and tough thermoplastic elastomers. After an initial conditioning step, the electrical characteristics remain constant with strain. The strain-dependent characteristics are similar in orthogonal stretching directions. Devices can be impacted with a hammer and punctured with a needle while remaining functional and stretchable.

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