期刊
ADVANCED MATERIALS
卷 27, 期 40, 页码 6170-6175出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502889
关键词
nonvolatile memory; organic-inorganic hybrid perovskites; resistive switching
类别
资金
- Nano Material Technology Development Program [NRF 2011-0030228]
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science ICT & Future Planning [2014M3C1A3053029]
- IPRS Scholarship
- National Research Foundation of Korea [2011-0030228, 2014M3C1A3053029] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The CH(3)NH(3)PbI(3-x)Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/ CH3NH3PbI3-xClx/FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.
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