期刊
ADVANCED MATERIALS
卷 27, 期 30, 页码 4502-4508出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501086
关键词
few layer MoSe2; interlayer shear mode; molybdenum diselenide; polytypism; stacking
类别
资金
- Singapore National Research Foundation [NRF-RF2009-06, NRF-NRFI2015-03]
- Ministry of Education [MOE2012-T2-2-086, 2013-T1-002-232]
- Singapore National Research Foundation (NRF) under NRF [NRF-NRFF2013-07]
- National Research Foundation
- Prime Minister Office, Singapore under Medium Sized Centre Programme
- U.S. DOE [DE-FG02-09ER46554]
- U.S. Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division
- ORNL's Center for Nanophase Materials Sciences (CNMS), DOE Office of Science User Facility
Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.
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