4.7 Article

Two-step post-treatment to deliver high performance thermoelectric device with vertical temperature gradient

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APPLIED SURFACE SCIENCE
卷 613, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.apsusc.2022.156101

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Arginine; de-doping; Thermoelectric device

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The power factor of PEDOT:PSS film can be improved by optimizing the oxidation level through a two-step post-treatment using a mixture of EG, Arg, and H2SO4. The EG dopant removes excess PSS and induces a conformational change in the PEDOT:PSS film. Arg controls the oxidation level and prevents over-oxidation during H2SO4 treatment, leading to increased S. The resulting high-performing film can be used for thermoelectric devices and shows potential applications in wearable electronics.
The power factor of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film can be significantly improved by optimizing the oxidation level of the film in oxidation and reduction processes. However, precise control over the oxidation and reduction effects in PEDOT:PSS remains a challenge, which greatly sacrifices both S and sigma. Here, we propose a two-step post-treatment using a mixture of ethylene glycol (EG) and Arginine (Arg) and sulfuric acid (H2SO4) in sequence to engineer high-performance PEDOT:PSS thermoelectric films. The high-polarity EG dopant removes the excess non-ionized PSS and induces benzenoid-to-quinoid conformational change in the PEDOT:PSS films. In particular, basic amino acid Arg tunes the oxidation level of PEDOT:PSS and prevents the films from over-oxidation during H2SO4 post-treatment, leading to increased S. The following H2SO4 post-treatment further induces highly orientated lamellar stacking microstructures to increase sigma, yielding a maximum power factor of 170.6 mu Wm- 1 K-2 at 460 K. Moreover, a novel trigonal-shape thermoelectric device is designed and assembled by the as-prepared PEDOT:PSS films in order to harvest heat via a vertical temperature gradient. An output power density of 33 mu W cm-2 is generated at a temperature difference of 40 K, showing the potential application for low-grade wearable electronic devices.

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