4.6 Article

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

期刊

APPLIED PHYSICS LETTERS
卷 122, 期 15, 页码 -

出版社

AIP Publishing
DOI: 10.1063/5.0141517

关键词

-

向作者/读者索取更多资源

Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) with different grading profiles of a 10-nm-thick AlxGa1-xN channel are demonstrated using hot-wall metal-organic chemical vapour deposition (MOCVD). The growth process is optimized by correlating the Al-profiles and the interface sharpness with specific MOCVD process parameters. The impact of incorporating a thin AlN interlayer on the HEMT properties is investigated. The results show improved device linearity for the optimized graded channel HEMT structure.
Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for low-noise radio-frequency amplifiers. In this work, we demonstrate different grading profiles of a 10-nm-thick AlxGa1-xN channel from x = 0 to x = 0.1 using hot-wall metal-organic chemical vapor deposition (MOCVD). The growth process is developed by optimizing the channel grading and the channel-to-barrier transition. For this purpose, the Al-profiles and the interface sharpness, as determined from scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, are correlated with specific MOCVD process parameters. The results are linked to the channel properties (electron density, electron mobility, and sheet resistance) obtained by contactless Hall and terahertz optical Hall effect measurements coupled with simulations from solving self-consistently Poisson and Schrodinger equations. The impact of incorporating a thin AlN interlayer between the graded channel and the barrier layer on the HEMT properties is investigated and discussed. The optimized graded channel HEMT structure is found to have similarly high electron density (similar to 9 x 10(12) cm(-2)) as the non-graded conventional structure, though the mobility drops from similar to 2360 cm(2)/V s in the conventional to similar to 960 cm(2)/V s in the graded structure. The transconductance g(m) of the linearly graded channel HEMTs is shown to be flatter with smaller g(m)' and g(m)'' as compared to the conventional non-graded channel HEMT implying improved device linearity. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据