Coexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices

In this work, we have investigated the coexistence of volatile and nonvolatile memristive effects in epitaxial phase-separated La0.5Ca0.5MnO3 thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 and 200 K), we measured a combination of volatile and nonvolatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials that can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware.

Automated summary

In this work, the coexistence of volatile and nonvolatile memristive effects in epitaxial phase-separated La0.5Ca0.5MnO3 thin films was investigated. Volatile resistive changes arising from self-heating effects near a metal-to-insulator transition were observed at low temperatures (50 K). At higher temperatures (140 and 200 K), a combination of volatile and nonvolatile effects resulting from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field was measured. These findings demonstrate the potential of phase separated manganites for electrically mimicking the behavior of neurons and synapses on the same device, which is significant for the development of neuromorphic computing hardware.