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Jon F. Ihlefeld et al.
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Patrick Polakowski et al.
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TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
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H Kohlstedt et al.
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Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
AK Tagantsev et al.
JOURNAL OF APPLIED PHYSICS (2001)
High endurance scaled PLZT thin films for FRAM applications
F Chu et al.
INTEGRATED FERROELECTRICS (2001)