Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring

We report the incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G center emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda/n)(3). The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G center dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease in the average lifetime of the G centers, which points at a low radiative yield (< 10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single-photon sources for integrated quantum photonics.

Automated summary

We demonstrate the incorporation of G centers in silicon-on-insulator (SOI) microrings through ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is investigated using continuous-wave and time-resolved microphotoluminescence experiments. By adjusting the size of the microrings, we achieve resonance between the G centers and the microrings, resulting in enhanced zero-phonon line intensity. However, the average lifetime of the G centers remains unchanged, indicating a low radiative yield. We also discuss the impact of parasitic defects in heavily implanted silicon and the potential for quantum electrodynamics experiments with color centers in lightly implanted SOI rings.