相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability
Hengbo Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)
Low temperature and high-performance ZnSnO thin-film transistors engineered by in situ thermal manipulation
Wengao Pan et al.
JOURNAL OF MATERIALS CHEMISTRY C (2022)
UV-Treated ZrO2 Passivation for Transparent and High-Stability In2O3 Thin Film Transistor
Yanan Ding et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)
Hydroxyl-induced stability and mobility enhancement for field effect transistor based on In2O3 nanofiber
Yanan Ding et al.
APPLIED PHYSICS LETTERS (2022)
Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
Yiming Liu et al.
MEMBRANES (2021)
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
Te Jui Yen et al.
NANOMATERIALS (2020)
ZnO transparent conducting thin films codoped with anions and cations
Jiangang Ma et al.
CHINESE SCIENCE BULLETIN-CHINESE (2020)
Sr:F co-doping of In2O3 thin film and its dual inhibition effect on trap states to achieve a high stability thin film transistor deposited by solution process
Jun Li et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2019)
Solution-processed metal-oxide thin-film transistors: a review of recent developments
Rongsheng Chen et al.
NANOTECHNOLOGY (2019)
Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation
Jun Li et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping
Hua Xu et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Electrical characteristics of Li and N co-doped amorphous InZnSnO thin film transistors
Jinbao Su et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2019)
Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition
De-Yao Zhong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
Xiang Yang et al.
RSC ADVANCES (2018)
High-performance thin-film transistors with solution-processed ScInO channel layer based on environmental friendly precursor
Wei Song et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor
Jeng-Ting Li et al.
APPLIED PHYSICS LETTERS (2017)
Metal oxides for optoelectronic applications
Xinge Yu et al.
NATURE MATERIALS (2016)
Notable Effects of Aliovalent Anion Substitution on the Electronic Structure and Properties of Metal Oxides and Sulfides
C. N. R. Rao
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2015)
Anion-controlled passivation effect of the atomic layer deposited ZnO films by F substitution to O-related defects on the electronic band structure for transparent contact layer of solar cell applications
Yong-June Choi et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2015)
Metal and F dual-doping to synchronously improve electron transport rate and lifetime for TiO2 photoanode to enhance dye-sensitized solar cells performances
Yandong Duan et al.
JOURNAL OF MATERIALS CHEMISTRY A (2015)
New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films
K. G. Saw et al.
PLOS ONE (2015)
Transient viscoelasticity study of tobacco mosaic virus/Ba2+ superlattice
Haoran Wang et al.
NANOSCALE RESEARCH LETTERS (2014)
Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
Jin-Seong Park et al.
APPLIED PHYSICS LETTERS (2008)
Criteria for choosing transparent conductors
RG Gordon
MRS BULLETIN (2000)
分享论文
