Strain-induced massless Dirac fermion state of the molecular conductor α-(BEDT-TTF)2I3

Uniaxial pressure can dramatically change the properties of low-dimensional systems and induce electronic phase transitions. The first-discovered molecular massless Dirac electron system a-(BEDT-TTF)(2)I-3 has intensively been studied because of its unique features, such as the Fermi energy being very close to the Dirac point, strong electron correlation, and the quantum phase transition from the charge-ordered insulating state. However, the Dirac state is realized only under high pressure of 1.5 kbar, which limits the measurement of physical properties (e.g., experimental determination of band dispersion and density of states). Here, we demonstrate that the Dirac state of a-(BEDT-TTF)(2)I-3 can be realized by applying uniaxial bending strain without confining it in a pressure cell. Uniaxial strain below 1% completely suppresses the metal-insulator transition observed at ambient pressure. Under strain, a characteristic temperature dependence of magnetoresistance associated with the formation of the n = 0 Landau level is observed, indicating the realization of the massless Dirac state.

Automated summary

Uniaxial pressure can alter the properties of low-dimensional systems and induce electronic phase transitions. The unique features of the molecular massless Dirac electron system a-(BEDT-TTF)(2)I-3, such as its proximity to the Dirac point, strong electron correlation, and charge-ordered insulating state, have led to intensive studies. However, the Dirac state was previously only achieved under high pressure, which limits the measurement of physical properties. This study demonstrates that the Dirac state of a-(BEDT-TTF)(2)I-3 can be realized by applying uniaxial bending strain without the need for a pressure cell.