InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

Article Physics, Applied

Demonstration of ultra-small 5 x 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

Panpan Li et al.

Summary: In this work, ultra-small 5 x 5 mu m(2) amber mu LEDs with high EQE and low reverse current were demonstrated using InGaN materials, indicating their promising potential for AR and VR displays.

APPLIED PHYSICS LETTERS (2022)

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Article Multidisciplinary Sciences

Study on the effect of size on InGaN red micro-LEDs

Ray-Hua Horng et al.

Summary: In this research, it is observed that the smaller the size of the InGaN red micro-LED, the more obvious the blue shift of the emission wavelength with increasing injection current. Smaller chip micro-LEDs exhibit similar output power density at the same injection current density.

SCIENTIFIC REPORTS (2022)

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Article Physics, Applied

Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Panpan Li et al.

Summary: This paper presents efficient red InGaN micro-light-emitting diodes (mu LEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth. The red TJ mu LEDs exhibit uniform electroluminescence, with an emission peak wavelength of 623 nm and a full-width half maximum of 47 nm at a low current density of 1 A/cm². The peak external quantum efficiency (EQE) measured in an integrating sphere reaches 4.5%. These results indicate significant progress in exploring high-efficiency InGaN red mu LEDs using TJ technology. Published under an exclusive license by AIP Publishing.

APPLIED PHYSICS LETTERS (2022)

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Review Crystallography

Progress of InGaN-Based Red Micro-Light Emitting Diodes

Panpan Li et al.

Summary: InGaN-based red micro-size light-emitting diodes (μLEDs) are highly attractive due to their less influenced external quantum efficiency (EQE) by size effect compared to common AlInGaP-based red μLEDs. Additionally, InGaN red μLEDs exhibit robust device performance even at high temperatures up to 400K. This review discusses the progress of InGaN red μLEDs and explores novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells.

CRYSTALS (2022)

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Article Materials Science, Multidisciplinary

Size effects of AlGaInP red vertical micro-LEDs on silicon substrate

Kaili Fan et al.

Summary: This study investigates the size effect of AlGaInP red micro-LEDs on a silicon substrate. Five micro-LEDs with different pixel sizes were fabricated and their electrical and optical properties were examined. The results show that smaller micro-LEDs have lower leakage current and higher series resistance, allowing them to withstand higher current density without current crowding effect. Although smaller micro-LEDs have a larger perimeter-to-area ratio leading to increased non-radiative recombination and reduced EQE, they can alleviate the issue of high-current efficiency droop and demonstrate better heat dissipation under high injection current.

RESULTS IN PHYSICS (2022)

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Article Multidisciplinary Sciences

Highly efficient blue InGaN nanoscale light-emitting diodes

Mihyang Sheen et al.

Summary: In this study, a blue nanorod LED with high external quantum efficiency (EQE) was demonstrated by reducing the size-dependent efficiency reduction through passivation. This work paves the way for manufacturing self-emissive nanorod LED displays for next-generation display technologies.

NATURE (2022)

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Article Optics

High-efficiency InGaN red micro-LEDs for visible light communication

Yu-Ming Huang et al.

Summary: In this study, a high-efficiency InGaN red micro-LED is presented, which incorporates superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector. It exhibits a maximum external quantum efficiency of 5.02% and a low efficiency droop at an injection current density of 112 A/cm(2). The fast carrier dynamics in the InGaN is characterized, and a high modulation bandwidth of 271 MHz is achieved by a 6x 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm(2). The technology holds great promise for full-color micro-displays and high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

PHOTONICS RESEARCH (2022)

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Article Physics, Applied

Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers

Philip Chan et al.

Summary: A highly relaxed InGaN buffer layer was grown on a full two-inch c-plane sapphire substrate using metalorganic chemical vapor deposition. The method resulted in a red-light emitting diode with a longer emission wavelength due to higher indium incorporation in the InGaN layers.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition

Matthew S. Wong et al.

Summary: The optical and electrical characteristics of InGaN blue and green micro-LEDs with GaN tunnel junction (TJ) contacts grown by MOCVD were compared at different activation temperatures using three different activation methods. Devices with chemical treatment before activation showed more uniform electroluminescence and higher light output power, indicating advantages for applications requiring high brightness and efficiency.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

High-temperature electroluminescence properties of InGaN red 40 x 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%

Panpan Li et al.

Summary: The study demonstrates the high-temperature stability and improved injection efficiency of InGaN red micro-LEDs, with a low thermal droop and high values for EQE and wall-plug efficiency at 400 K. These findings highlight the robustness of InGaN red micro-LEDs compared to conventional AlInGaP red micro-LEDs, showing much-improved stability under high temperatures.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

Amelie Dussaigne et al.

Summary: The full InGaN structure was grown on two different InGaNOS substrates, with an electron blocking layer inserted in the red emitting InGaN/InGaN quantum wells. The 10 mu m diameter circular micro-LEDs emitted at 625 nm showed a high external quantum efficiency.

APPLIED PHYSICS EXPRESS (2021)

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Article Physics, Applied

Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm

Panpan Li et al.

Summary: The study demonstrates the size-independent peak EQE of InGaN red mu LEDs, with the peak EQE of packaged mu LEDs ranging from 2.4% to 2.6% as the device area decreases. These results suggest the promising potential of high efficiency red mu LEDs with very small size using InGaN materials.

APPLIED PHYSICS LETTERS (2021)

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Article Optics

2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

Yongzhou Zhao et al.

Summary: This article investigated 2000 PPI red silicon-based AlGaInP micro-LED arrays, showing stable emission spectrum and excellent electrical stability and optical output.

OPTICS EXPRESS (2021)

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Article Materials Science, Multidisciplinary

Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes

Da-Hoon Lee et al.

Summary: The performance of AlGaInP-based red micro-LEDs with different n-type contact schemes was investigated in terms of current, ambient temperature, and chip size. Samples with different contact schemes showed variations in electroluminescence characteristics and temperature dependence, with smaller samples exhibiting larger temperature-dependent reduction in output power at certain current densities.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2021)

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Article Engineering, Electrical & Electronic

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

Zhe Zhuang et al.

Summary: Amber InGaN micro-light-emitting diodes were demonstrated with varying peak wavelengths, full-width values, external quantum efficiency, and characteristic temperatures at different current densities. The study showed changes in performance characteristics such as blue shift, increased FWHM, external quantum efficiency, and characteristic temperature with increasing current density, mainly due to the saturation of non-radiative recombination processes.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Physics, Applied