InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

We demonstrate high-performance 10 x 10 mu m(2) InGaN amber micro-size LEDs (mu LEDs). At 15 A cm(-2), the InGaN mu LEDs show a single emission peak located at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 x 100 mu m(2) mu LEDs, the 10 x 10 mu m(2) InGaN red mu LEDs maintain a similar EQE value with the same efficiency droop. These results point out that InGaN materials are much more promising for higher efficiency than the common AlInGaP materials for the ultra-small size red mu LEDs required by augmented reality and virtual reality displays.

Automated summary

This article presents high-performance 10 x 10 μm InGaN amber micro-size LEDs. At 15 A cm(-2), the InGaN micro LEDs exhibit a single emission peak at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 x 100 μm InGaN red micro LEDs, the 10 x 10 μm InGaN red micro LEDs maintain a similar EQE value with the same efficiency droop. These results highlight the higher efficiency potential of InGaN materials compared to common AlInGaP materials for the ultra-small size red micro LEDs required by augmented reality and virtual reality displays.