4.8 Article

Electronic Structure Manipulation of the Mott Insulator RuCl3 via Single-Crystal to Single-Crystal Topotactic Transformation

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202219344

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Charge Carrier Transport; Electronic Structures; Intercalation; Mott Insulators; RuCl3

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This study demonstrates a facile and reversible single-crystal to single-crystal intercalation process to modify the electronic structure of honeycomb Mott insulator RuCl3. The resulting hybrid superlattice shows a reduced Mott-Hubbard gap and significantly improved electrical conductivity. This approach provides a new strategy to control Mott insulators and explore exotic physical phenomena.
The core task for Mott insulators includes how rigid distributions of electrons evolve and how these induce exotic physical phenomena. However, it is highly challenging to chemically dope Mott insulators to tune properties. Herein, we report how to tailor electronic structures of the honeycomb Mott insulator RuCl3 employing a facile and reversible single-crystal to single-crystal intercalation process. The resulting product (NH4)(0.5)RuCl3 center dot 1.5 H2O forms a new hybrid superlattice of alternating RuCl3 monolayers with NH4+ and H2O molecules. Its manipulated electronic structure markedly shrinks the Mott-Hubbard gap from 1.2 to 0.7 eV. Its electrical conductivity increases by more than 10(3) folds. This arises from concurrently enhanced carrier concentration and mobility in contrary to the general physics rule of their inverse proportionality. We show topotactic and topochemical intercalation chemistry to control Mott insulators, escalating the prospect of discovering exotic physical phenomena.

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