4.8 Article

High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ-Si-Si to Au Coordination

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 138, 期 36, 页码 11505-11508

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.6b07825

关键词

-

资金

  1. National Science Foundation [CHE-1404922]
  2. Semiconductor Research Corporation
  3. New York Center for Advanced Interconnect Science and Technology Program
  4. Direct For Mathematical & Physical Scien
  5. Division Of Chemistry [1404922] Funding Source: National Science Foundation

向作者/读者索取更多资源

A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaa-cenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si sigma bond and the other electrode.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据