相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Are 2D Interfaces Really Flat?
Zhihui Cheng et al.
ACS NANO (2022)
Benchmarking monolayer MoS2 and WS2 field-effect transistors
Amritanand Sebastian et al.
NATURE COMMUNICATIONS (2021)
Modulation of Negative Differential Resistance in Black Phosphorus Transistors
Ruiqing Cheng et al.
ADVANCED MATERIALS (2021)
Negative Differential Resistance in Carbon-Based Nanostructures
S. A. Evlashin et al.
PHYSICAL REVIEW APPLIED (2021)
Near-infrared photodetection using random networks of single-walled carbon nanotubes with asymmetrical work-function electrodes
Mongkol Sapankaew et al.
MATERIALS RESEARCH EXPRESS (2021)
Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
Changjian Zhou et al.
NPJ 2D MATERIALS AND APPLICATIONS (2020)
Pinning-Free Edge Contact Monolayer MoS2 FET
Terry Y. T. Hung et al.
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)
Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers
Minghan Xian et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)
Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts
Gianluca Milano et al.
NANOTECHNOLOGY (2019)
Electron Transport through Metal/MoS2 Interfaces: Edge- or Area-Dependent Process?
Aron Szabo et al.
NANO LETTERS (2019)
Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts
Zhihui Cheng et al.
NANO LETTERS (2019)
Contact engineering for 2D materials and devices
Daniel S. Schulman et al.
CHEMICAL SOCIETY REVIEWS (2018)
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2
Kirby K. H. Smithe et al.
NANO LETTERS (2018)
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions
Yuan Liu et al.
NATURE (2018)
Contacting and Gating 2-D Nanomaterials
Zhihui Cheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
Kirby K. H. Smithe et al.
2D MATERIALS (2017)
From the metal to the channel: a study of carrier injection through the metal/2D MoS2 interface
Goutham Arutchelvan et al.
NANOSCALE (2017)
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash et al.
SCIENTIFIC REPORTS (2017)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim et al.
ACS NANO (2017)
Field effects of current crowding in metal-MoS2 contacts
Hui Yuan et al.
APPLIED PHYSICS LETTERS (2016)
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English et al.
NANO LETTERS (2016)
Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
Pankaj Sharma et al.
ACS NANO (2015)
Performance Potential and Limit of MoS2 Transistors
Xuefei Li et al.
ADVANCED MATERIALS (2015)
Electrical contacts to two-dimensional semiconductors
Adrien Allain et al.
NATURE MATERIALS (2015)
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
Han Liu et al.
ACS NANO (2014)
Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals
Yao Guo et al.
ACS NANO (2014)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Channel Length Scaling of MoS2 MOSFETs
Han Liu et al.
ACS NANO (2012)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
分享论文
