Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS2 Memristors

2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS2 films on the reliability and other device metrics of MoS2-based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by approximate to 16x for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An effective switching layer model compatible with both monolayer and few-layer MoS2, is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. The Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

Automated summary

It has been found that the reliability and endurance of MoS2-based memristors can be improved by reducing the top electrode deposition rate and increasing the thickness of MoS2 films. Experimental results show that these optimization methods can increase the reliability to 92% and improve the average DC cycling endurance by approximately 16 times. Additionally, an effective switching layer model has been proposed to understand the convergence of switching metrics and the improvement in reliability related to fabrication configuration.