Solution-Processed and Room-Temperature Spin Light-Emitting Diode Based on Quantum Dots/Chiral Metal-Organic Framework Heterostructure

Spin optoelectronics is an indispensable key for the future development of spintronics. In conventional spin light emitting diodes (LEDs), spin-polarized carrier pairs are injected electrically into the light emitting layer and create circularly polarized light (CPL). Generally, spin-polarized carriers are accomplished using ferromagnetic contacts or applying an external magnetic field, which will produce several drawbacks, including low temperature operation, low spin-polarized carriers injection efficiency, etc. To circumvent the existing shortcomings, here, an alternative approach is proposed and achieves spin-polarized LEDs at room temperature based on quantum dots (QDs)/chiral metal-organic framework heterojunction without using ferromagnetic contacts or magnetic fields. The spin-polarized injected layer composed of self-assembled monolayer (SAM)/Chiral-MOF ([Sr(9,10-adc)(DMAc)2]n)) film, which produces spin-polarized holes with spin orientation, determining the polarization and strength of circularly polarized electroluminescence (CP-EL). The spin-QLED emits CP-EL at a rate of 12.24% efficiency, which provides an excellent alternative to generate new functionality for conventional QLEDs. The approach is anticipated to be very useful, enabling to offer a general methodology for generating not yet realized spin optoelectronic devices.

Automated summary

Spin optoelectronics is crucial for the future development of spintronics. A new approach based on quantum dots/chiral metal-organic framework heterojunction has been proposed to achieve spin-polarized LEDs at room temperature without using ferromagnetic contacts or magnetic fields. This method provides a general methodology for generating spin optoelectronic devices that have not yet been realized.