Redox-Mediated Single-Molecule Transistor with A Subthreshold Swing Down To 120 mV Decade-1

The single-molecule electronic devices offer the ultimate solution to miniaturize integrated circuits, and subthreshold swing (SS) is the key indicator of the power consumption for single-molecule transistors but is still quite restricted. In this study, the redox-mediated single-molecule transistor with a SS down to 120 mV decade(-1) in the faradaic potential region via the electrochemical-STM break junction (EC-STM-BJ) technique is fabricated. With an off-state leakage current of less than 10 pA and an on/off ratio of 100, the balance between low static power consumption and a high switching ratio is achieved. The theoretical investigations reveal that the conductance tuning is from the difference of transmission in the redox process. The study provides a new strategy for the design of single-molecule transistors with promising SS, which is essential for the potential application of single-molecule devices.

Automated summary

In this study, a redox-mediated single-molecule transistor with a subthreshold swing (SS) of 120 mV decade(-1) was fabricated using the electrochemical-scanning tunneling microscopy break junction (EC-STM-BJ) technique. The transistor exhibited low static power consumption and a high on/off ratio, suggesting a promising design strategy for single-molecule devices.