☆ 4.8 Article

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

ADVANCED FUNCTIONAL MATERIALS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Multidisciplinary

Assessment of Wafer-Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements

Sebastian Wittmann et al.

Summary: Wet and semidry transfer methods for graphene were evaluated for wafer scalability, handling, contamination, and electrical performance. Wet transfer showed superior yield, carbon contamination level, and electrical quality, while semidry transfer demonstrated scalability due to existing industrial tools and processes.

ADVANCED MATERIALS TECHNOLOGIES (2023)

添加到收藏夹

Review Chemistry, Multidisciplinary

Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook

Jun-young Kim et al.

Summary: Two-dimensional materials have attracted attention for their potential in scientific breakthroughs and technological innovations. The integration of 2DMs on Si CMOS platform or flexible electronics has gained interest for applications such as back-end-of-line transistors, memory devices/ selectors, and sensors. The successful transfer of 2DM layers from growth substrate to Si is crucial for these applications, and various transfer methods leveraging van der Waals transfer capability have been developed. This review surveys and compares these transfer methods, focusing on 2D TMDC film transfer and 2DM template-assisted van der Waals growth/transfer of non-2D thin films.

ACS NANO (2023)

添加到收藏夹

Article Chemistry, Multidisciplinary

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors

Solomon Amsalu Chekol et al.

Summary: The study investigates the switching dynamics of diffusive memristors based on volatile electrochemical metallization (v-ECM) devices, identifying the importance of filament formation and growth process on its relaxation time through analysis of threshold kinetics and filament relaxation.

ADVANCED FUNCTIONAL MATERIALS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Atomic Threshold Switch Based on All-2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility

Revannath Dnyandeo Nikam et al.

Summary: The use of 2D heterostructure of hBN-graphene allows for atomic-level controlled formation/rupture of conductive filaments, achieving excellent switching characteristics for ideal atomic switches while maintaining optimal threshold switching behavior and rapid switching speed.

ADVANCED FUNCTIONAL MATERIALS (2022)

添加到收藏夹

Article Physics, Applied

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Yuan Li et al.

Summary: The resistive switching properties of molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied using metal insulator metal configurations with different electrode materials. The devices show forming-free bipolar resistive switching (BRS) behavior, self-compliant current BRS characteristics, and the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Editorial Material Multidisciplinary Sciences

2D materials for future heterogeneous electronics

Max C. Lemme et al.

Summary: This article investigates the reasons for the slow transition of graphene and 2D materials from laboratories to commercial production and summarizes the main challenges and opportunities that have hindered their commercialization.

NATURE COMMUNICATIONS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

An ab initio study on resistance switching in hexagonal boron nitride

Fabian Ducry et al.

Summary: Two-dimensional materials, such as hexagonal boron nitride (h-BN), have potential applications in implementing memristive devices for data storage or neuromorphic computing. The resistance switching mechanism of h-BN in contact with inert electrodes, such as graphene or Pt, is likely attributed to the localized change of h-BN's electronic structure caused by atomic defects.

NPJ 2D MATERIALS AND APPLICATIONS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

A sub-500 mV monolayer hexagonal boron nitride based memory device

Jun Ge et al.

Summary: This study introduces an interface engineering strategy by inserting an interfacial polymer layer between monolayer hexagonal boron nitride and top electrodes, which successfully improves the performance of vertical memristive devices based on single-layer materials. The device demonstrates stable resistive switching behavior with low operating voltage, high on/off ratio, long retention time, and excellent flexibility, showing promising potential for large-scale integrated ultrathin flexible memory applications.

MATERIALS & DESIGN (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride

Revannath Dnyandeo Nikam et al.

Summary: The report introduces a quantized conductance atomic threshold switch (QCATS) using an atomically-thin hexagonal boron nitride (hBN) layer, which has applications in memory and logic devices. The device shows stable and reproducible conductance quantization state and operates by forming single-atom point contact through a monoatomic boron defect in the hBN layer. By implementing excellent switching characteristics with single-layer hBN, the possibility of stable and uniform atomic-switching devices for future memory and logic applications is confirmed.

SMALL (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Arne Quellmalz et al.

Summary: The study presents a generic methodology for large-area integration of 2D materials through adhesive wafer bonding, utilizing equipment, processes, and materials readily available in large-scale semiconductor manufacturing lines. This approach is suitable for back end of the line integration of 2D materials on top of integrated circuits, with the potential to accelerate progress in electronics, photonics, and sensing. Existing integration approaches for 2D materials often degrade material properties and are not compatible with industrial processing, highlighting the need for new strategies like adhesive wafer bonding.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Variability and Yield in h-BN-Based Memristive Circuits: The Role of Each Type of Defect

Yaqing Shen et al.

Summary: In the race to fabricate solid-state nano/microelectronic devices using 2D layered materials, memristors show higher tolerance to defects compared to transistors and memtransistors, making them easier to achieve high yield and low variability.

ADVANCED MATERIALS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Nonpolar Resistive Switching of Multilayer-hBN-Based Memories

Pingping Zhuang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Review Multidisciplinary Sciences

Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu. Illarionov et al.

NATURE COMMUNICATIONS (2020)

添加到收藏夹

Article Physics, Applied

Point defects in two-dimensional hexagonal boron nitride: A perspective

Jijun Zhang et al.

JOURNAL OF APPLIED PHYSICS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

Shaochuan Chen et al.

NATURE ELECTRONICS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

150 nm x 200 nm Cross-Point Hexagonal Boron Nitride-Based Memristors

Bin Yuan et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices

Xu Jing et al.

2D MATERIALS (2019)

添加到收藏夹

Article Physics, Applied

Oxygen-assisted synthesis of hBN films for resistive random access memories

Weiyi Lin et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States

Kaichen Zhu et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Recommended Methods to Study Resistive Switching Devices

Mario Lanza et al.

ADVANCED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials

Marco A. Villena et al.

MICROELECTRONICS RELIABILITY (2019)

添加到收藏夹

Review Chemistry, Physical

Hexagonal boron nitride monolayers on metal supports: Versatile templates for atoms, molecules and nanostructures

Willi Auwaerter

SURFACE SCIENCE REPORTS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Thinnest Nonvolatile Memory Based on Monolayer h-BN

Xiaohan Wu et al.

ADVANCED MATERIALS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

A. Ranjan et al.

SCIENTIFIC REPORTS (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

Fei Hui et al.

2D MATERIALS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Electronic synapses made of layered two-dimensional materials

Yuanyuan Shi et al.

NATURE ELECTRONICS (2018)

添加到收藏夹

Article Materials Science, Ceramics

Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups

Mario Lanza et al.

JOURNAL OF ELECTROCERAMICS (2017)

添加到收藏夹

Review Chemistry, Multidisciplinary

Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

Jingang Wang et al.

RSC ADVANCES (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

Fei Hui et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Lanlan Jiang et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

Chengbin Pan et al.

2D MATERIALS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Chengbin Pan et al.

ADVANCED FUNCTIONAL MATERIALS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices

Sung Kyu Kim et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

添加到收藏夹

Review Computer Science, Information Systems

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Ee Wah Lim et al.

ELECTRONICS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

Lu Hua Li et al.

NANO LETTERS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

Lu Hua Li et al.

ACS NANO (2014)

添加到收藏夹

Review Materials Science, Multidisciplinary

A Review on Conduction Mechanisms in Dielectric Films

Fu-Chien Chiu

ADVANCES IN MATERIALS SCIENCE AND ENGINEERING (2014)

添加到收藏夹

Article Physics, Applied

Simulation of multilevel switching in electrochemical metallization memory cells

Stephan Menzel et al.

JOURNAL OF APPLIED PHYSICS (2012)

添加到收藏夹

Article Chemistry, Multidisciplinary

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

Ki Kang Kim et al.

NANO LETTERS (2012)

添加到收藏夹

Article Materials Science, Multidisciplinary

An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials

W. S. Lau

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2012)

添加到收藏夹

Article Chemistry, Multidisciplinary

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

Roman V. Gorbachev et al.

SMALL (2011)

添加到收藏夹

Article Chemistry, Multidisciplinary

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

Ruth Muenstermann et al.

ADVANCED MATERIALS (2010)

添加到收藏夹

Article Physics, Applied

Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectrics

Fu-Chien Chiu et al.

JOURNAL OF APPLIED PHYSICS (2009)

添加到收藏夹

Article Engineering, Electrical & Electronic

Conduction mechanisms in MOS gate dielectric films

BL Yang et al.

MICROELECTRONICS RELIABILITY (2004)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.