GaN/Gr (2D)/Si (3D) Combined High- Performance Hot Electron Transistors

To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron transistor (HET) has been proposed. This device has the advantage of high working speed and some complex logic functions can be completed by using one component. Here, we demonstrate a mixed-dimensional HET composed of GaN/AlN microwires, graphene (Gr), and Si. The electrons between GaN/AlN are injected into graphene by an F-N tunneling mechanism to achieve high speed hot electrons, then cross graphene by ballistic transport, and are collected in a nearly lossless manner through a low-barrier Si. Therefore, the device shows a record DC gain of 16.2, a collection efficiency close to the limit of 99.9% based on the graphene hot electron transistor (GHET), an emitter current density of about 68.7 A/cm2, and a high on/off current ratio reaching similar to 107. Meanwhile, the current saturation range is wide, beyond those of most GHETs. It has potential applications as a power amplifier.

Automated summary

To address the issue of minority carrier storage time in bipolar transistors, a hot electron transistor (HET) has been proposed. This device offers high working speed and the ability to perform complex logic functions with just one component. A mixed-dimensional HET composed of GaN/AlN microwires, graphene (Gr), and Si has been demonstrated, which achieves high speed hot electrons by injecting electrons between GaN/AlN into graphene through F-N tunneling mechanism, allowing for ballistic transport and collection through low-barrier Si. The device exhibits a record DC gain of 16.2, collection efficiency close to the limit of 99.9% based on GHET, emitter current density of 68.7 A/cm2, high on/off current ratio of approximately 107, and wide current saturation range, making it suitable for potential applications as a power amplifier.