Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Remote epitaxy (RE), substrate polarity can penetrate two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into incommensurate epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a layer-by-layer growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.

Automated summary

Remote epitaxy (RE) is a prospective universal growth strategy that utilizes the penetration of substrate polarity through two-dimensional materials (2DMs) to act on the epi-layer. However, the role of 2DMs in RE has not been deeply investigated. This study realizes the RE of single-crystal films on the weakest polarity/iconicity substrate and reveals its essence physical properties.