期刊
ACS NANO
卷 17, 期 5, 页码 4740-4747出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c11110
关键词
UiO-66; organic linker; electron-beam sensitivity; radiolysis mechanism; iDPC-STEM
Electron-induced structural changes in materials can be observed using electron microscopy, but it is challenging for beam-sensitive materials. In this study, a new technique was used to image a metal-organic framework, UiO-66 (Zr), at very low electron dose and dose rate, revealing missing organic linkers. The kinetics of missing linkers and lattice deformation were also observed. This research provides visual insight into electron-induced chemistry and helps prevent electron damage to sensitive materials.
Electron-induced structural changes influence the characterizations of the local structure of various materials by electron microscope. However, for beam-sensitive materials, it is still challenging to detect such changes by electron microscopy, which may help us quantitatively reveal how electrons interact with materials under electron irradiation. Here, we use an emergent phase contrast technique in electron microscopy to clearly image a metal-organic framework, UiO-66 (Zr), at an ultralow electron dose and dose rate. The effects of both the dose and dose rate on the UiO-66 (Zr) structure are visualized, which induce obvious missing organic linkers. The kinetics of the missing linker based on the radiolysis mechanism are semiquantitatively expressed by the different intensities of the imaged organic linkers. Deformation of the UiO-66 (Zr) lattice after the missing linker is also observed. These observations make it possible to visually investigate the electron-induced chemistry in various beam-sensitive materials and avoid electron damage to them.
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