In-Plane Anisotropic Rectification and Photovoltaic Effects on ZnO Nonpolar (1010) Crystal Plane and the Physical Mechanism

The concept of spontaneous electric field (Es) in polar structures is crucial for understanding the physical and chemical properties of compound semiconductors and improving their perform-anes. However, this concept has not been widely accepted so far. Here, we show the first observation of rectification and photovoltaic effects in the polar [0001] direction on the nonpolar ZnO (1010) crystal plane. However, no rectification and photovoltaic effects are observed in the nonpolar [1210] direction perpendicular to the [0001]. When a stress was applied in the [0001] direction of the ZnO single crystal, the rectification and photovoltaic effects are abated and disappeared. The disappearance of the two effects results from the pressure-induced disappearance of the polar structure. The results fully demonstrated that the rectification and photovoltaic effects arise from the existence of Es in the polar [0001] direction. The Es motivates the directional transfer of the electrons and photocreated charges along the [0001] direction, and the rectification and photovoltaic effects are thus observed. These results provide direct evidence for the polar structure theory and suggest that the polar structures can be employed to develop new types of photovoltaic and other electronic and photoelectronic devices.

Automated summary

This study demonstrates for the first time the rectification and photovoltaic effects in the polar [0001] direction on the nonpolar ZnO (1010) crystal plane, while no such effects are observed in the nonpolar [1210] direction. The application of stress in the [0001] direction leads to the disappearance of the polar structure, resulting in the disappearance of the two effects. These findings provide direct evidence for the importance of polar structures in generating rectification and photovoltaic effects.