Radiation Resilient Two-Dimensional Electronics

Limitations in cloud-based computinghave prompted a paradigm shifttoward all-in-one edge devices capable of independentdata sensing, computing, and storage. Advanced defense and space applicationsstand to benefit immensely from this due to their need for continualoperation in areas where maintaining remote oversight is difficult.However, the extreme environments relevant to these applications necessitaterigorous testing of technologies, with a common requirement beinghardness to ionizing radiation. Two-dimensional (2D) molybdenum disulfide(MoS2) has been noted to enable the sensing, storage, andlogic capabilities necessary for all-in-one edge devices. Despitethis, the investigation of ionizing radiation effects in MoS2-based devices remains incomplete. In particular, studies on gammaradiation effects in MoS2 have been largely limited tostandalone films, with few device investigations; to the best of ourknowledge, no explorations have been made into gamma radiation effectson the sensing and memory capabilities of MoS2-based devices.In this work, we have used a statistical approach to study high-dose(1 Mrad) gamma radiation effects on photosensitive and programmablememtransistors fabricated from large-area monolayer MoS2. Memtransistors were divided into separate groups to ensure accurateextraction of device characteristics pertaining to baseline performance,sensing, and memory before and after irradiation. All-MoS2 logic gates were also assessed to determine the gamma irradiationimpact on logic implementation. Our findings show that the multiplefunctionalities of MoS2 memtransistors are not severelyimpacted by gamma irradiation even without dedicated shielding/mitigationtechniques. We believe that these results serve as a foundation formore application-oriented studies going forward.

Automated summary

Limitations in cloud-based computing have led to a shift towards all-in-one edge devices that can independently sense, compute, and store data. Advanced defense and space applications face challenges in maintaining remote oversight, making the development of such devices crucial. In this study, the effects of high-dose gamma radiation on MoS2-based memtransistors were investigated. The findings show that these devices are not severely impacted by gamma irradiation, even without dedicated shielding or mitigation techniques. This research serves as a foundation for future application-oriented studies.