Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 x 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Automated summary

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials with great potential in electronic and optoelectronic applications, but surface defects significantly affect their performance. We propose a counterintuitive two-step process involving Ar ion bombardment and subsequent annealing to decrease surface defects on TMDs. With this approach, the defect density on PtTe2 and PdTe2 surfaces was reduced by more than 99%, mainly Te vacancies, achieving a defect density <1.0 x 10^10 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind these processes.