4.8 Article

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga2O3 Heterojunction Channels

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Materials Science, Multidisciplinary

Ferroelectricity enhanced self-powered solar-blind UV photodetector based on Ga2O3/ZnO:V heterojunction

Hongbin Wang et al.

Summary: In this study, self-powered solar-blind ultraviolet (UV) photodetectors (PDs) based on Ga2O3/ZnO:V heterojunction were fabricated using the pulsed laser deposition method. The photoresponse behaviors of the Ga2O3/ZnO:V PDs can be controlled by the induced ferroelectric polarization field in ZnO:V. The improved performance of the Ga2O3/ZnO:V PD can be attributed to the increase in the built-in electric field and the widening of the depletion region under the influence of the depolarization field, which benefits the separation and transport of photogenerated carriers at the heterojunction interface.

MATERIALS TODAY PHYSICS (2023)

Article Chemistry, Multidisciplinary

ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors

Dangwu Ni et al.

Summary: In this study, a photoelectrochemical (PEC)-type solar-blind detector constructed by atomic layer deposition (ALD) of oxygen vacancy-rich amorphous Ga2O3 on three-dimensional ZnO nanorod arrays was demonstrated. The device exhibited high photoresponsivity, ultrahigh light to dark ratio, and fast response and recovery times, which resulted from the abundant oxygen vacancies in Ga2O3, the three-dimensional ordered nanostructure, and the Ga2O3/ZnO heterojunction.

NANOSCALE (2022)

Article Physics, Multidisciplinary

Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor

Tong Mei et al.

Summary: This paper describes the performance of an epsilon-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep UV photodetector for 254 nm wavelength sensing. The photodetector can operate in both power supply mode and self-powered mode, delivering excellent photoelectrical properties in each. The results lay a solid foundation for the application of epsilon-Ga2O3/ZnO heterojunction in deep UV sensors.

PHYSICA SCRIPTA (2022)

Article Chemistry, Multidisciplinary

Highly Sensitive Direct-Conversion Vacuum Flat-Panel X-Ray Detectors Formed by Ga2O3-ZnO Heterojunction Cold Cathode and ZnS Target and their Photoelectron Multiplication Mechanism

Zhipeng Zhang et al.

Summary: This article proposes a direct-conversion flat-panel X-ray detector that achieves highly sensitive X-ray detection by optimizing the material and device structure. The detector has low dark current density, good stability, and fast response speed.

ADVANCED MATERIALS INTERFACES (2022)

Article Chemistry, Physical

Enhancing the self-powered performance in VOx/Ga2O3 heterojunction ultraviolet photodetector by hole-transport engineering

Shan Li et al.

Summary: In this study, self-powered ultraviolet photodetectors were constructed using VOx films as hole transport layer (HTL) on VOx/Ga2O3 heterojunctions. By manipulating the conductivity of the HTL through annealing, controllable photodetection performance was achieved. The modulated VGO PDs showed enhanced photodetection performance and fast response time.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Article Chemistry, Physical

Low-Temperature-Crystallized Ga2O3 Thin Films and Their TFT-Type Solar-Blind Photodetectors

Yu Pei et al.

Summary: By using seed-induced engineering, crystalline Ga2O3 material was successfully prepared at a lower processing temperature, showing promising performance in solarblind photodetectors.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2022)

Article Physics, Applied

High-temperature reliability of all-oxide self-powered deep UV photodetector based on ε-Ga2O3/ZnO heterojunction

Maolin Zhang et al.

Summary: Ga2O3-based photodetectors are promising for DUV detection, but the reliability under high temperature conditions is a challenge. This study presents an all-oxide self-powered DUV photodetector based on ε-Ga2O3/ZnO heterojunction and investigates its performance in high-temperature environments.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)

Article Nanoscience & Nanotechnology

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin-Film Transistors

Linfeng Lan et al.

Summary: A tetravalent-terbium-doped indium oxide semiconductor is reported, which improves the NBIS stability of TFTs while maintaining high mobility.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Engineering, Electrical & Electronic

Hybrid visible-blind ultraviolet photodetector based on NiO thin-film phototransistor and p-NiO/n-Si heterojunction diode

Jun -Dar Hwang et al.

Summary: A hybrid visible-blind ultraviolet (UV) photodetector, consisting of a p-NiO/n-Si heterojunction diode and a NiO-based thin-film phototransistor, was proposed and studied. The hybrid photodetector exhibited high quantum efficiency and photocurrent gain. The mechanism of the photocurrent gain was explained by the band diagrams of the heterojunction diodes and thin-film phototransistors.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

Article Nanoscience & Nanotechnology

High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

Shiyu Du et al.

Summary: A high-performance ultraviolet (UV) photodetector based on amorphous Ga2O3/ZnO nanoarrays on p-GaN film was successfully fabricated. This detector exhibits excellent UV sensing properties in the UV-A/UV-C region with fast response without external bias. The high photosensitivity is attributed to the geometry of the match-like Ga2O3/ZnO nanoarrays and the emergence of built-in field between the amorphous Ga2O3 and ZnO interface. These findings provide a new method to enhance the ZnO/GaN heterostructure for broadband ultraviolet sensing applications.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2022)

Article Materials Science, Multidisciplinary

Review of self-powered solar-blind photodetectors based on Ga2O3

Chao Wu et al.

Summary: This review summarizes the recent research progress on self-powered solar-blind photodetectors based on Ga2O3. The detectors are classified into different types, and the fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments are summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.

MATERIALS TODAY PHYSICS (2022)

Article Engineering, Electrical & Electronic

High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3

Xiao-Xi Li et al.

Summary: This article presents a high responsivity and fully flexible Ta-doped beta-Ga2O3 DUV phototransistor with outstanding optoelectrical properties and mechanical flexibility, showing potential applications in UV imaging and artificial intelligence.

NPJ FLEXIBLE ELECTRONICS (2022)

Article Chemistry, Multidisciplinary

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Yuehui Wang et al.

Summary: High-performance avalanche photodetectors (APDs) based on amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction have been successfully fabricated, showing ultrahigh responsivity, specific detectivity, external quantum efficiency, and exceptional capability for detecting ultraweak signals under 254 nm light irradiation. The superior performance of a-Ga2O3-based APDs can be attributed to intrinsic carrier transport mechanisms in a-Ga2O3 and modified band alignment at the heterojunctions, providing greater design flexibility for wide applications of emerging Ga2O3 semiconductor with improved performance.

ACS NANO (2021)

Article Engineering, Electrical & Electronic

High-Detectivity β-Ga2O3 Microflake Solar-Blind Phototransistor for Weak Light Detection

Shunjie Yu et al.

Summary: This letter presents a high-performance solar-blind phototransistor based on N-2-annealed beta-Ga2O3 microflake for weak light detection. The device exhibits ultra-low dark current, high external quantum efficiency, and narrow-band response, achieving ultra-high responsivity and record-high detectivity under specific illumination conditions. The device demonstrates superior weak-light-detection performance for solar-blind photodetection applications.

IEEE ELECTRON DEVICE LETTERS (2021)

Review Materials Science, Multidisciplinary

A Strategic Review on Gallium Oxide Based Deep-Ultraviolet Photodetectors: Recent Progress and Future Prospects

Damanpreet Kaur et al.

Summary: The article discusses the application of gallium oxide-based photodetectors in UV-C radiation sterilization. Despite existing challenges, the paper emphasizes key parameters and future prospects for development in this field.

ADVANCED OPTICAL MATERIALS (2021)

Article Chemistry, Multidisciplinary

Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging

Yuan Qin et al.

Summary: This study focuses on ultrahigh-performance metal-semiconductor-metal (MSM) solar-blind photodetectors (SBPDs) based on post-annealed amorphous (a-) Ga2O3, demonstrating superhigh sensitivity and response speed, as well as ultrahigh photo-to-dark current ratio and specific detectivity, indicating practicality for applications in solar-blind imaging, environmental monitoring, artificial intelligence, and machine vision.

ADVANCED SCIENCE (2021)

Article Materials Science, Multidisciplinary

Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction

H. Wang et al.

Summary: This paper presents a flexible metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetector enhanced by piezoelectric effect, which improves its performance by applying strain, and investigates the mechanism of improvement for the a-Ga2O3/ZnO heterojunction photodetector.

MATERIALS TODAY PHYSICS (2021)

Article Materials Science, Multidisciplinary

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin-Film Transistors

Zuyin Han et al.

ADVANCED OPTICAL MATERIALS (2020)

Article Engineering, Electrical & Electronic

All-Oxide NiO/Ga2O3 p-n Junction for Self-Powered UV Photodetector

Yachao Wang et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Engineering, Electrical & Electronic

Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p-n Heterojunction

Jiaye Zhang et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Nanoscience & Nanotechnology

Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method

Dazheng Chen et al.

MICRO & NANO LETTERS (2019)

Article Nanoscience & Nanotechnology

Amorphous Gallium Oxide-Based Gate-Tunable High-Performance Thin Film Phototransistor for Solar-Blind Imaging

Yuan Qin et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Engineering, Electrical & Electronic

Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

Yaxuan Liu et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Chemistry, Multidisciplinary

Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

Longxing Su et al.

Article Materials Science, Multidisciplinary

Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

Shujuan Cui et al.

ADVANCED OPTICAL MATERIALS (2017)

Article Chemistry, Multidisciplinary

One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors

Wenxiang Mu et al.

CRYSTENGCOMM (2017)

Article Nanoscience & Nanotechnology

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

Jiazhen Sheng et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

Xing Chen et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Multidisciplinary

Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

Wei-Yu Kong et al.

ADVANCED MATERIALS (2016)

Article Materials Science, Multidisciplinary

Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

Sooyeoun Oh et al.

JOURNAL OF MATERIALS CHEMISTRY C (2016)

Article Materials Science, Multidisciplinary

Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes

Hai Zhou et al.

JOURNAL OF MATERIALS CHEMISTRY C (2015)

Article Physics, Applied

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

Wan Sik Hwang et al.

APPLIED PHYSICS LETTERS (2014)

Article Materials Science, Multidisciplinary

Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Daoyou Guo et al.

OPTICAL MATERIALS EXPRESS (2014)

Article Physics, Applied

A three-dimensional, polarization-insensitive superconducting nanowire avalanche photodetector

V. B. Verma et al.

APPLIED PHYSICS LETTERS (2012)

Article Materials Science, Multidisciplinary

Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach

Altynbek Murat et al.

PHYSICAL REVIEW B (2012)

Article Electrochemistry

Large Photoresponse in Amorphous In-Ga-Zn-O and Origin of Reversible and Slow Decay

Dong Hee Lee et al.

ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)

Article Materials Science, Multidisciplinary

Oxygen sensing at high temperatures using Ga2O3 films

C Baban et al.

THIN SOLID FILMS (2005)