期刊
ACS APPLIED MATERIALS & INTERFACES
卷 15, 期 18, 页码 22251-22262出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c01830
关键词
one-dimensional crystal-structured materials; Sb2Se3; orientation control; flexible solar cells; open-circuit voltage
Recently, antimony selenide (Sb2Se3) has shown potential for flexible photoelectric applications due to its unique crystal structure, low-cost constituents, and superior optoelectronic properties. An unprecedented control of the (001) orientation for Sb2Se3 film growth on a flexible Mo-coated mica substrate was achieved by manipulating selenization kinetics. This method resulted in high-efficiency Sb2Se3 solar cells with a record open-circuit voltage (VOC) and improved carrier collection.
Recently, antimony selenide (Sb2Se3) has exhibited an exciting potential for flexible photoelectric applications due to its unique one-dimensional (1D) chain-type crystal structure, low-cost constituents, and superior optoelectronic properties. The 1D structure endows Sb2Se3 with a strong anisotropy in carrier transport and a lasting mechanical deformation tolerance. The control of the crystalline orientation of the Sb2Se3 film is an essential requirement for its device performance optimization. However, the current state-of-the-art Sb2Se3 devices suffer from unsatisfactory orientation control, especially for the (001) orientation, in which the chains stand vertically. Herein, we achieved an unprecedented control of the (001) orientation for the growth of the Sb2Se3 film on a flexible Mo-coated mica substrate by balancing the collision rate and kinetic energy of Se vapor particles with the surface of Sb film by regulating the selenization kinetics. Based on this (001)-oriented Sb2Se3 film, a high efficiency of 8.42% with a record open-circuit voltage (VOC) of 0.47 V is obtained for flexible Sb2Se3 solar cells. The vertical van der Waals gaps in the (001) orientation provide favorable diffusion paths for Se atoms, which results in a Se-rich state at the bottom of the Sb2Se3 film and promotes the in situ formation of the MoSe2 interlayer between Mo and Sb2Se3. These phenomena contribute to a back-surface field enhanced absorber layer and a quasi-Ohmic back contact, improving the device's VOC and the collection of carriers. This method provides an effective strategy for the orientation control of 1D materials for efficient photoelectric devices.
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