期刊
ADVANCED MATERIALS
卷 27, 期 9, 页码 1573-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201405259
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资金
- DOE [DE-FG02-07ER46376]
- National Science Foundation (NSF) [1124733, 1128304]
- MARCO
- DARPA
- NSE [OCI-1053575]
- Information Technology at Purdue University, West Lafayette, IN, USA
- Directorate For Engineering [1128304, 1124733] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1128304, 1124733] Funding Source: National Science Foundation
An indirect-gap-to-direct-gap transition in many-layer MoS2 is demonstrated. The transition is an outcome of the decoupling of electronic states in individual layers, driven by partial intercalation of the van der Waals gap in MoS2 through exposure to low-power, remotely generated oxygen plasma.
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