期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 41, 期 1, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/5.0097509
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We report the finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, with the observation of inelastic cotunneling current in the Coulomb-blockade region. The cotunneling current appears as a resonant-tunneling current peak emerging from the excited state and sustained within the blockade regions. This unique cotunneling feature is ascribed to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations for a two-level quantum dot support our experimental observation.
We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb-blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state and sustain within the blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.
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