期刊
ADVANCED MATERIALS
卷 28, 期 3, 页码 547-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503033
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资金
- National Key Basic Research Program of China [2013CBA01604, 2015CB921600]
- National Natural Science Foundation of China [61325020, 61261160499, 11274154, 61521001]
- MICM Laboratory Foundation [9140C140105140C14070]
- project funded by Priority Academic Program Development of Jiangsu Higher Education Institutions
- Jiangsu Shuangchuang program
- Jiangsu Shuangchuang Team Program
By combining a high-kappa dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room- temperature mobility of approximate to 150 cm(2) V-1 s(-1) and room-temperature phonon-limited transport in a mono layer MoS2 transistor for the first time.
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