期刊
JOURNAL OF SEMICONDUCTORS
卷 43, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1674-4926/43/11/113101
关键词
gallium nitride; plasma etching; atomic layer etching; self-limiting
资金
- Key Projects of Ministry of Science and Technology of the People's Republic of China [SQ2020YFF0407077]
- Industry-University-Re-search Cooperation Project of Jiangsu Province [BY2020462]
- National Foreign Experts Bureau High-end Foreign Experts Project [G20190114003]
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [2021XKT1206]
This paper presents the basic properties and applications of GaN, various etching methods, and reviews of GaN plasma ALE systems, comparing their similarities and differences. Additionally, it outlines the industrial application of GaN plasma ALE.
With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similarities and differences are compared. In addition, the industrial application of GaN plasma ALE is outlined.
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