4.7 Article

Ultrafast Carrier Dynamics in 2D NbTe2 Films: Implications for Photonic and Optoelectronic Devices?

期刊

ACS APPLIED NANO MATERIALS
卷 5, 期 12, 页码 17348-17355

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c04333

关键词

layered transition-metal dichalcogenides; NbTe2 flake; ultrafast carrier dynamics; pump-probe spectroscopy; optical properties

资金

  1. Australian Research Council Discovery Projects program [DP150102972, DP190103186, FT210100806]
  2. Swinburne ECRSUPRA program
  3. Industrial Transformation Training Centers scheme [IC180100005]
  4. Beijing Natural Science Foundation [Z180007]
  5. National Key R&D Program of China [2022YFA1404800]
  6. National Natural Science Foundation of China [12174207, 12074202, 12134006, 61704024]
  7. Natural Science Foundation of Tianjin City [19JCQNJC01800, 20JCQNJC00020]

向作者/读者索取更多资源

This study reports on the ultrafast carrier dynamics of niobium ditelluride (NbTe2) measured using time-resolved pump-probe transient reflection spectroscopy. The thickness-dependent carrier relaxation time and the effect of pump power on carrier dynamics are observed, and the isotropic relaxation dynamics in NbTe2 are verified.
As one of the representatives of emerging metallic transition-metal dichalcogenides, niobium ditelluride (NbTe2) has attracted intensive interest recently due to its distorted lattice structure and unique physical properties. Here, we report on the ultrafast carrier dynamics in NbTe2 measured using time-resolved pump-probe transient reflection spectroscopy. A thickness-dependent carrier relaxation time is observed, exhibiting a clear increase in the fast and slow carrier decay rates for thin NbTe2 flakes. In addition, pump-power-dependent measurements indicate that the carrier relaxation rates are power-independent and the peak amplitude of the transient reflectivity increases linearly with the pump power. The isotropic relaxation dynamics in NbTe2 is also verified by performing polarization-resolved pump-probe measurements. These results provide insight into the light-matter interactions and charge-carrier dynamics in NbTe2 and will pave the way for its applications to photonic and optoelectronic devices.

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