Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 x 10(12) Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. E-g of MoS2 is tuned by the ultra-high electrostatic field from the ferroelectric polarization. The photo response wavelengths of the photo detector are extended into the near-infrared (0.85-1.55 mu m).