期刊
ADVANCED MATERIALS
卷 27, 期 26, 页码 3915-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500956
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资金
- AIST
- National Basic Research Program of China 973 project [2014CB921002, 2012CB921702]
- Chinese Academy of Sciences [XDB07030200]
A Sn doping strategy is demonstrated to improve lithium diffusion kinetics by expanding the spacing of (003) planes without destroying the layered structure. A large (003) spacing will significantly decrease the energy barrier associated with lithium diffusion. Besides better rate capability, the Sn-doped material exhibits an unexpected much improved capacity above 3.0 V (vs Li+/Li), which is highly desired in future applications.
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