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Luca Nela et al.
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Eric N. Jin et al.
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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
Hsin-Ying Lee et al.
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Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-Ga2O3 Grown by Mist Chemical Vapor Deposition
Ha Young Kang et al.
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Divine P. Kumah et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Stefano Leone et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx
Xiao Cui et al.
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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
Yachao Zhang et al.
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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
Ryota Ochi et al.
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High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
Subaru Yusa et al.
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The dawn of Ga2O3 HEMTs for high power electronics - A review
R. Singh et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Current Status and Future Trends of GaN HEMTs in Electrified Transportation
Niloufar Keshmiri et al.
IEEE ACCESS (2020)
Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films
Yaobin Xu et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface
Sung Beom Cho et al.
APPLIED PHYSICS LETTERS (2018)
HCI Flow-Induced Phase Change of alpha-, beta-, and epsilon-Ga2O3 Films Grown by MOCVD
Haiding Sun et al.
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Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
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Growth and characterization of alpha-, beta- and epsilon-phases of Ga2O3 using MOCVD and HVPE techniques
Yao Yao et al.
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Enhancement of Breakdown voltage i n AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer
Toshiki Kabemura et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films
Hiroyuki Nishinaka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator
Patrick Fiorenza et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Opportunities and Future Directions for Ga2O3
Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
Francesco Mezzadri et al.
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Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition
Xiabing Lou et al.
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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Huan-Yu Shih et al.
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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Huan-Yu Shih et al.
NANOSCALE RESEARCH LETTERS (2016)
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis
Syed Mukulika Dinara et al.
AIP ADVANCES (2015)
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors
Donghyun Jin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors
Ling Lv et al.
MICROELECTRONICS RELIABILITY (2011)
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Jinwook W. Chung et al.
IEEE ELECTRON DEVICE LETTERS (2008)