Epitaxial ?-Ga2O3/GaN heterostructure for high electron-mobility transistors

GaN power technology, especially AlGaN/GaN high electron-mobility transistors (HEMTs), has made significant progress in recent years. However, the performance of HEMTs is still limited due to a trade-off between on -resistance and off-state breakdown voltage (BV). Integrating a polar gate dielectric with GaN HEMTs can potentially improve both sheet resistance of the two-dimensional electron gas channel and the field distribution between gate and drain. In this regard, orthorhombic kappa-Ga2O3 has attractive properties since it is predicted to be strongly polar and highly dielectric while it grows epitaxially on GaN. By successfully integrating crystalline kappa-Ga2O3 on GaN HEMTs, the channel sheet resistance is reduced by 20% from a reference device with amorphous Al2O3 gate dielectric. As a result, the cut-off frequency increases from 4.8 to 9.1 GHz. The dielectric property of kappa-Ga2O3 also improves BV from 354 to 380 V by reducing the peak electric field in the gate-drain region.

Automated summary

By integrating orthorhombic kappa-Ga2O3 with GaN HEMTs, the sheet resistance of the electron gas channel and the field distribution between gate and drain can be improved, leading to enhanced performance of the HEMTs.