Predicted THz-wave absorption properties observed in all-inorganic perovskite CsPbI3 thin films: Integrity at the grain boundary

The realization of terahertz (THz) detectors using organic-inorganic hybrid perovskite (OHP) materials presents a challenge because of the high real conductivities and broad THz absorption spectra required. The control of phonon vibration modes in OHPs depends on the control of defect states such as the defect-incorporated perovskite structure and the delta/alpha-mixed interfacial structure observed in MAPbI3 and delta/alpha-mixed FAPbI3, respectively. Difficulties with defect control in particular materials may amplify relative risk factors and invite strong resistance to commercialization. As an alternative to OHPs, the all-inorganic perovskite material CsPbI3 (lacking the hydrophobic organic cations that generate structural defects) constitutes a good candidate for THz detectors. We investigated the phonon vibration modes of thin films of the all-inorganic perovskite gamma-CsPbI3 containing no atomic or chemical defect states. We observed the three expected major phonon vibration modes at 0.9, 1.5, and 1.8 THz that originate from the transverse I-Pb-I frame, the Cs-I-Cs optical vibration, and the longitudinal I-Pb-I frame, respectively, finding good agreement with theoretical simulations. Significantly, the real conductivity of these all-inorganic perovskite thin films ranged from approximately 10-40 S/cm across a broad frequency range of 0.5-3.0 THz, demonstrating the material's considerable potential for application as a THz-band detector.

Automated summary

The all-inorganic perovskite material gamma-CsPbI3 shows potential as a THz detector due to its high real conductivity and broad THz absorption spectra. It has controllable phonon vibration modes and lacks structural defects, making it a good candidate for commercialization.