期刊
ENERGY STORAGE MATERIALS
卷 54, 期 -, 页码 863-874出版社
ELSEVIER
DOI: 10.1016/j.ensm.2022.11.031
关键词
Schottky contact; Built-in voltage; Ion transport kinetics; Semiconducting passivation layer; Amorphous carbon film; Dendrite-free Zn-metal anode
Alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes using radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. CCF-M enhanced the corrosion resistance, suppressed dendrite growth, and improved Zn2+ transport kinetics on the Zn-anode. After 5000 and 1302 cycles in a symmetric cell, Zn2+ could deposit rapidly and uniformly below CCF-M without dendrites and side reactions.
Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low iondiffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (FSB) and built-in voltage (V-bi). CCF-M, Phi(SB), and V-bi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm(-2), respectively, with a capacity retention of similar to 83% after 5000 cycles at 1.0 A g(V21O5)(-1) in Zn vertical bar V2O5 full cell.
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