MRAM makes its mark

Review Chemistry, Multidisciplinary

Review of Semiconductor Flash Memory Devices for Material and Process Issues

Seung Soo Kim et al.

Summary: This review summarizes the current status and critical challenges of charge-trap-based flash memory devices, focusing on the choices of materials, circuit architecture, physical integration structure, and programming techniques. The latest advancements in improving fabrication processes and device performances using new materials are introduced, as well as the future development direction of storage devices based on the ionic mechanism.

ADVANCED MATERIALS (2023)

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Article Multidisciplinary Sciences

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Sangik Choi et al.

Summary: In this study, a 2 x 2 one-transistor static random-access memory (1T-SRAM) cell array was fabricated with individual cells demonstrating long retention time, nondestructive read characteristics, and high endurance. The standby power consumption of individual cells was low and they showed strong immunity to disturbances. The reliability of the 1T-SRAM cell array was validated through nondestructive reading without disturbance in half-selected cells.

SCIENTIFIC REPORTS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

S-C Chang et al.

Summary: This paper demonstrates the industry-best performance and reliability of hafnium-based FeRAM, showcasing fast read/write speed, long endurance, and stable operation at elevated temperatures. A physics-based circuit model for AFE capacitors is developed to describe FeRAM operations, showing high yield and healthy memory window under disturbance, paving the way for next-generation embedded memory.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Review Engineering, Electrical & Electronic