Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

A van der Waals heterostructure that has a partial floating-gate field-effect transistor device architecture can function as both reconfigurable transistor and reconfigurable non-volatile memory, and can provide reconfigurable logic-in-memory capabilities. Logic-in-memory architectures could be used to develop efficient computing devices with low power consumption. However, the approach is limited by device performance issues, including reliability and versatility. Here we report a two-dimensional van der Waals heterostructure device that can function as both reconfigurable transistor and reconfigurable non-volatile memory, as well as provide reconfigurable logic-in-memory capabilities. The architecture of the device-termed a partial floating-gate field-effect transistor-offers both charge-trapping and field-regulating units. When operating as a transistor, the device can be switched between the p- and n-type mode, and exhibits a subthreshold swing of 64 mV dec(-1) and on/off current ratio approaching 10(8). When operating as a memory, the device can be switched between the p- and n-type memory, and exhibits an erase/program ratio approaching 10(8). We use the devices to fabricate complementary metal-oxide-semiconductor circuits, and linear and nonlinear logic gates with in situ storage, as well as device-efficient half-adder circuits.

Automated summary

This article introduces a van der Waals heterostructure with a partial floating-gate field-effect transistor device architecture that can function as both a reconfigurable transistor and a reconfigurable non-volatile memory, and can provide reconfigurable logic-in-memory capabilities.