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Multidimensional device architectures for efficient power electronics

NATURE ELECTRONICS (2022)

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Article Engineering, Electrical & Electronic

Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode

Ruizhe Zhang et al.

Summary: The study found that the new avalanche mode through the fin channel in vertical GaN power Fin-JFET has a high critical avalanche energy density and withstands over 1800 repetitive avalanche pulses, with a failure-to-open-circuit signature. In contrast, the avalanche characteristics in other devices show a failure-to-short-circuit signature.

IEEE ELECTRON DEVICE LETTERS (2022)

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Article Nanoscience & Nanotechnology

β-Gallium oxide power electronics

Andrew J. Green et al.

Summary: Gallium Oxide has become a leading ultra-wide band gap semiconductor technology due to its favorable material properties. This roadmap presents the current state-of-the-art and future challenges in the field, aiming to enhance device performance and design efficient microelectronic systems.

APL MATERIALS (2022)

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Article Physics, Applied

A perspective on multi-channel technology for the next-generation of GaN power devices

Luca Nela et al.

Summary: The outstanding properties of Gallium Nitride (GaN) have led to significant improvements in the performance of power devices compared to traditional silicon technology. GaN power technology is rapidly developing and expected to gain a significant market share in various applications. However, the current performance of GaN devices is still far from its full potential, requiring a reduction in device on-resistance.

APPLIED PHYSICS LETTERS (2022)

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Article Engineering, Electrical & Electronic

Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design

Jingcun Liu et al.

Summary: This article demonstrates for the first time that avalanche current in GaN JFETs can flow through the source by using a MOSFET driver with a large gate resistance or an RC-interface driver. Physics-based mixed-mode electrothermal simulations reveal the carrier dynamics under different avalanche paths. Additionally, it shows that the RC-interface driver outperforms the MOSFET driver for GaN JFETs.

IEEE TRANSACTIONS ON POWER ELECTRONICS (2022)

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Article Engineering, Electrical & Electronic

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

Ruizhe Zhang et al.

Summary: Insufficient short-circuit robustness of currently commercial GaN power devices is a major obstacle for their applications in automotive powertrains. This paper presents a breakthrough in short-circuit capability through a vertical GaN fin-channel junction-gate field-effect transistor (Fin-JFET). The Fin-JFET shows excellent short-circuit resistance and retains stability even after failure, making it highly desirable for power electronics systems.

IEEE TRANSACTIONS ON POWER ELECTRONICS (2022)

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Proceedings Paper Computer Science, Hardware & Architecture

Experimental demonstration, challenges, and prospects of the vertical SiC FinFET

F. Udrea et al.

Summary: This paper reports the development of the first vertical, normally-off high voltage SiC FinFET device, which exhibits high breakdown voltage and low on-state resistance. A TCAD model is developed to provide a physical insight into the operation of this device. The paper also discusses the FinFET effect for a wider class of SiC power devices rated at different voltages.

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2022)

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Article Engineering, Electrical & Electronic

Tri-Gate GaN Junction HEMTs: Physics and Performance Space

Yunwei Ma et al.

Summary: Tri-gate GaN junction high electron mobility transistors (Tri-JHEMT) demonstrate high kilovolt blocking capability and superior gate controllability compared to traditional planar GaN HEMTs. The unique physics of the sidewall p-GaN/2DEG junction enables Tri-JHEMTs to achieve lower ON-resistance, higher wafer 2DEG density, and scaled gate length for a wide range of voltage classes. These devices show great potential as next-generation lateral GaN power switches.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Review Engineering, Electrical & Electronic

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Yuhao Zhang et al.

Summary: Gallium nitride (GaN) is increasingly utilized in power and RF applications, with FinFET and trigate architectures being leveraged to develop advanced GaN devices. These devices offer superior gate controllability and various structural innovations, enabling higher performance in terms of current ratio, threshold swing, and channel effects suppression. Several GaN FinFET and trigate device technologies are nearing commercialization, presenting exciting research opportunities in this field.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

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Article Physics, Applied

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

R. Lingaparthi et al.

Summary: Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures were successfully demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The presence of donor-like trap states, situated at 0.6 to 0.8eV above the valence band at the buried GaN-channel/AlGaN-barrier interfaces, was identified as the source of 2DEG in UID MC-HEMT heterostructures.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

Jingcun Liu et al.

Summary: This work investigates the high-temperature performance and avalanche capability of normally-off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors (Fin-JFETs), demonstrating their superior thermal stability, gate leakage current mechanism, and high-bias drain leakage current. The results show a BVAVA over 1700 V and a critical avalanche energy (E-AVA) of 7.44 J/cm(2), indicating the great potentials of vertical GaN Fin-JFETs for medium-voltage power electronics applications.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic

Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs

Hengyu Wang et al.

Summary: This article investigates the switching performance of vertical GaN power FinFETs and introduces three new interfin designs. The study reveals that the split-gate (SG) structure significantly improves device turn-on/off speed and reduces switching losses in 1.2-kV vertical GaN power FinFETs.

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

Multi-channel nanowire devices for efficient power conversion

L. Nela et al.

Summary: AlGaN/GaN nanowires containing multiple two-dimensional electron gas channels can be used to create high-electron-mobility tri-gate power transistors that exhibit low specific on resistances, enhancement-mode operation, improved dynamic behavior, and high breakdown voltages.

NATURE ELECTRONICS (2021)

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Article Physics, Applied

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Ang Li et al.

Summary: This paper reports a high-performance multi-channel heterostructure based on lattice-matched AlInN/GaN, which increases the electron gas density and reduces the sheet resistance. By alleviating strain defects caused by piezoelectric strain, the performance of the devices is improved.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

10 kV, 39 mΩ•cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Ming Xiao et al.

Summary: This study demonstrates multi-channel AlGaN/GaN Schottky barrier diodes with a breakthrough voltage over 10 kV and proposes a novel device design for electric field management, showing the great promise of GaN in the field of medium- and high-voltage power electronics.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Multi-kV Class β-Ga2O3 MESFETs With a Lateral Figure of Merit Up to 355 MW/cm2

Arkka Bhattacharyya et al.

Summary: This study presents high-performance over 3 kV gate-pad-connected field plated (GPFP) beta-Ga2O3 lateral MESFETs with high lateral figures of merit (LFOM) achieved through metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. By utilizing an improved low-temperature MOVPE selective area epitaxy process, the total contact resistance to the channel has been reduced to as low as 1.4 Omega.mm. The GPFP design utilizing plasma-enhanced chemical vapor deposited (PECVD) SiNx dielectric and SiNx/SiO2 wrap-around passivation demonstrates significant improvements in R-ON and breakdown voltage (V-BR), resulting in up to 3x higher LFOM compared to non-FP beta-Ga2O3 lateral MESFETs. The achieved V-BR (approximately 2.5 kV) and LFOM (355 MW/cm^2) in the GPFP beta-Ga2O3 lateral MESFET are the highest reported values in any depletion-mode beta-Ga2O3 lateral device to date.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Gallium nitride-based complementary logic integrated circuits

Zheyang Zheng et al.

Summary: The current driving force of the integrated circuit industry is silicon CMOS technology due to its energy efficiency, while wide-bandgap semiconductor materials like GaN are favored in power electronics and radiofrequency power amplifiers. However, the challenge lies in integrating n-channel and p-channel field-effect transistors on a single substrate for GaN CMOS logic circuits.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Yuke Cao et al.

Summary: Electric-field-induced second harmonic generation is utilized to map the electric field distribution in the device channel of GaN-based high-electron-mobility transistors. The study shows that changes in carbon dopant concentration can significantly affect the electric field distribution in the devices, highlighting the role of dopants in altering the device characteristics. Additionally, dislocation-related leakage paths can lead to inhomogeneity in the electric field within the devices.

NATURE ELECTRONICS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV

M. Xiao et al.

Summary: The study introduces a new device concept, the MC2-HEMT, which integrates high-electron-mobility transistors with both low and high voltage functions in a monolithic structure. Experimental results demonstrate its superior performance in breakdown voltage, threshold voltage, and specific on-resistance, suggesting potential applications in the power transistor field.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

A. Raj et al.

Summary: In this study, GaN/AlGaN superlattice based MESFinFET devices were reported with MOCVD regrown p(+) contacts around the fins, achieving a normally-off operation with an on-current of 65 mA/mm and a large I-on/I-off >10^7. This represents a significant advancement in the development of large band gap pFET devices for efficient high voltage CMOS platforms in power conversion applications.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then et al.

Summary: This study demonstrates the scaling of an enhancement-mode high-k GaN-on-300mm Si(111) NMOS transistor with best-in-class performance and figure-of-merits, achieving record high transconductance and excellent RF output power. The research also shows the potential for integrating GaN NMOS finfet and Si PMOS finfet technologies in a low-leakage 3D-stacked GaN-Si CMOS inverter system, setting a milestone for GaN-on-Si technology.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Article Engineering, Electrical & Electronic

The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC

Rahul P. Ramamurthy et al.

Summary: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels that increase the current-carrying width of the MOS inversion layer, reducing specific channel resistance. This innovation is particularly beneficial in silicon carbide, where the mobility of the inversion layer is significantly lower than in silicon, allowing for reduced on-resistance in SiC power MOSFETs at blocking voltages below 1,000 V, meeting the needs of over 68% of applications.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

Hengyu Wang et al.

IEEE ELECTRON DEVICE LETTERS (2020)

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Article Physics, Applied

Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2020)

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Review Physics, Applied

Diamond power devices: state of the art, modelling, figures of merit and future perspective

N. Donato et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

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Article Physics, Applied

A unified model for vertical doped and polarized superjunction GaN devices

Haimeng Huang et al.

APPLIED PHYSICS LETTERS (2020)

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Article Chemistry, Multidisciplinary

Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

Woojin Choi et al.

NANO LETTERS (2020)

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Article Engineering, Electrical & Electronic

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Ming Xiao et al.

IEEE ELECTRON DEVICE LETTERS (2020)

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Article Engineering, Electrical & Electronic

Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC

James A. Cooper et al.

IEEE ELECTRON DEVICE LETTERS (2020)

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Article Physics, Applied

Tri-gate GaN junction HEMT

Yunwei Ma et al.

APPLIED PHYSICS LETTERS (2020)

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Article Engineering, Electrical & Electronic

(Ultra)Wide-Bandgap Vertical Power FinFETs

Yuhao Zhang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Samuel James Bader et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

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Trapping and Detrapping Mechanisms in beta-Ga2O3 Vertical FinFETs Investigated by Electro-Optical Measurements

Elena Fabris et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

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Proceedings Paper Engineering, Electrical & Electronic

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

J. Liu et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

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Proceedings Paper Engineering, Electrical & Electronic

5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode

M. Xiao et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

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Proceedings Paper Computer Science, Hardware & Architecture

Superior Short-Circuit Performance of SiC Superjunction MOSFET

Masakazu Okada et al.

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) (2020)

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Proceedings Paper Computer Science, Hardware & Architecture

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

I Abid et al.

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) (2020)

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Jun Ma et al.

IEEE ELECTRON DEVICE LETTERS (2019)

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Article Physics, Applied

Leakage and breakdown mechanisms of GaN vertical power FinFETs

Ming Xiao et al.

APPLIED PHYSICS LETTERS (2019)

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Review Physics, Applied

Recent development of vertical GaN power devices

Tohru Oka

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

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The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

Josephine Chang et al.

IEEE ELECTRON DEVICE LETTERS (2019)

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Article Physics, Applied

Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices

X. Zhou et al.

APPLIED PHYSICS LETTERS (2019)

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Thermal Transport in Superlattice Castellated Field Effect Transistors

Callum Middleton et al.

IEEE ELECTRON DEVICE LETTERS (2019)

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Article Engineering, Electrical & Electronic

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ•cm2 Specific On-Resistance for Power Device Applications

Chia-Hsun Wu et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Article Engineering, Electrical & Electronic

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Yinhe Wu et al.

IEEE ELECTRON DEVICE LETTERS (2019)

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COSS Measurements for Superjunction MOSFETs: Limitations and Opportunities

Grayson D. Zulauf et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Theory of 3-D Superjunction MOSFET

H. Kang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV

W. Li et al.

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)

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Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

Ali Razavieh et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2019)

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Proceedings Paper Computer Science, Hardware & Architecture

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

Ryoji Kosugi et al.

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2019)

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True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

Hyemin Kang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

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Material Limit of Power Devices-Applied to Asymmetric 2-D Superjunction MOSFET

H. Kang et al.

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The 2018 GaN power electronics roadmap

H. Amano et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)

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Review-Ultra-Wide-Bandgap AlGaN Power Electronic Devices

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Normally-Off C-H Diamond MOSFETs With Partial C-O Channel Achieving 2-kV Breakdown Voltage

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Xu She et al.

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Xuan Li et al.

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High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications

Bo-Yuan Chen et al.

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Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Edward A. Jones et al.

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SiC Integrated Circuit Control Electronics for High-Temperature Operation

Mihaela Alexandru et al.

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Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto

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Trench angle: a key design factor for a deep trench superjunction MOSFET

Hyemin Kang et al.

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Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Gang Liu et al.

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600 V Diamond Junction Field-Effect Transistors Operated at 200 °C

Takayuki Iwasaki et al.

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SiC and GaN devices - wide bandgap is not all the same

Nando Kaminski et al.

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Theoretical Investigation of Trigate AlGaN/GaN HEMTs

Mohamed A. Alsharef et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)

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Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Yuhao Zhang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)

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Tri-Gate Normally-Off GaN Power MISFET

Bin Lu et al.

IEEE ELECTRON DEVICE LETTERS (2012)

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GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Akira Nakajima et al.

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New Physical Insights on Power MOSFET Switching Losses

Yali Xiong et al.

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1200 V SiC vertical-channel-JFETs and cascode switches

Victor Veliadis

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