期刊
JOURNAL OF RENEWABLE AND SUSTAINABLE ENERGY
卷 8, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4939506
关键词
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资金
- University of Arkansas Little Rock, the Iraqi government
- NSF EPSCoR ASSET II Project through the Arkansas GREEN Research center [EPS-1003970]
A new type of n-p-n transistor photovoltaic device based on CdS/multi-wall carbon nanotube (MWNT)/n-Si configuration was fabricated in a facile process. CdS quantum dots were deposited on fluorine-doped tin-oxide glass using a chemical bath deposition method, and MWNT film was coated on n-type Si substrate by airbrushing. The materials used for the n-p-n transistor solar cells were characterized by multiple techniques including X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman, Ultraviolet visible (UV-vis) spectrophotometer, and I-V characteristic measurements. The CdS layer acts as a good n-type material for the transistor solar cells. The thickness of the CdS layer can be controlled by the chemical bath deposition time to achieve different photovoltaic responses. I-V characteristic measurements show that the efficiency increases with increasing the thickness of the CdS thin layer. Compared with the tandem solar cells based on (p/n)-(p/n) semiconductor junctions, our n-p-n transistor solar cell has a simple structure without using tunnel junctions or wafer bonding schemes for interconnecting the cells. (C) 2016 AIP Publishing LLC.
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