Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays

Ultrathin and dense metal oxide gate dielectric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities > 5 cm(2) V-1 s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes.