Evaluating charge-type of polyelectrolyte as dielectric layer in memristor and synapse emulation

Based on credible advantages, organic materials have received more and more attention in memristor and synapse emulation. In particular, an implementation of the ionic pathway as a dielectric layer is essential for organic materials used as building blocks of memristor and artificial synaptic devices. Herein, we describe an evaluation of the use of positive and negative polyelectrolytes as dielectric layers for a memristor with calcium ion (Ca2+) doping. The device based on a negative polyelectrolyte shows the potential to obtain an excellent resistive switching performance and synapse functionality, especially in the transformation behaviours from short-term plasticity (STP) to long-term plasticity (LTP) in both the potentiation and depression processes, which were comparable to the perfomrmance obtained with a positive polyelectrolyte. The mechanism of electrical resistance transition and synaptic function can be attributed to the migration of the doped Ca2+ and the ionic functional groups of polyelectrolyte, which result in the formation and vanishing filament-like Ca2+ flux.

Automated summary

Organic materials have gained attention in the field of memristor and synaptic emulation due to their credible advantages. In this study, the use of positive and negative polyelectrolytes as dielectric layers for a memristor with calcium ion (Ca2+) doping was evaluated. The device with a negative polyelectrolyte showed great potential in resistive switching performance and synapse functionality, comparable to the device with a positive polyelectrolyte. The electrical resistance transition and synaptic function were attributed to the migration of doped Ca2+ and the ionic functional groups of polyelectrolyte.