Researchers have discovered a silicon oxide that can protect perovskite photovoltaics from damage caused by protons, alpha particles, and atomic oxygen, improving their reliability for space applications.
Perovskite photovoltaics are promising for space applications, but their reliability needs to be addressed. Now, Kirmani et al. present a 1-mu m-thick silicon oxide that affords protection against protons, alpha particles and atomic oxygen. Perovskite photovoltaics are attractive for both terrestrial and space applications. Although terrestrial conditions require durability against stressors such as moisture and partial shading, space poses different challenges: radiation, atomic oxygen, vacuum and high-temperature operation. Here we demonstrate a silicon oxide layer that hardens perovskite photovoltaics to critical space stressors. A 1-mu m-thick silicon oxide layer evaporated atop the device contacts blocks 0.05 MeV protons at fluences of 10(15) cm(-2) without a loss in power conversion efficiency, which results in a device lifetime increase in low Earth orbit by x20 and in highly elliptical orbit by x30. Silicon-oxide-protected Cs-0.05(MA(0.17)FA(0.83))(0.95)Pb(I0.83Br0.17)(3)) (MA, methylammonium; FA, formamidinium cation) and CsPbI2Br cells survive submergence in water and N,N-dimethylformamide. Furthermore, moisture tolerance of Sn-Pb and CsPbI2Br devices is boosted. Devices are also found to retain power conversion efficiencies on exposure to alpha irradiation and atomic oxygen. This barrier technology is a step towards lightweight packaging designs for both space and terrestrial applications.
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