Role of nitrogen source flow on the growth of 2D GaN crystals

As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensional (2D) III-V semi-conductors is quite challenging. In this study, we report the successful synthesis of 2D GaN crystals by chemical vapor deposition (CVD) on liquid Ga. The nitrogen source flow is found to be a key factor that governs the transformation of GaN growth from 2D layered mode to three-dimensional (3D) island mode. This study provides further understanding on the growth of non-layered 2D III-nitride materials.

Automated summary

This study reports the successful synthesis of 2D GaN crystals by chemical vapor deposition and identifies the nitrogen source flow as a key factor in the growth mode of GaN.