4.6 Article

Wireless photoelectrochemical mechanical polishing for inert compound semiconductor wafers

期刊

JOURNAL OF MANUFACTURING PROCESSES
卷 88, 期 -, 页码 97-109

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.jmapro.2023.01.039

关键词

Chemical mechanical polishing; Bipolar electrochemistry; Wireless photoelectrochemical mechanical; polishing; Material removal rate; Ultrasmooth surface; GaN

向作者/读者索取更多资源

An efficient wireless photoelectrochemical mechanical polishing (WPECMP) method was proposed based on the mechanism of bipolar photoelectrochemistry, which applies a wireless electric field to separate photogenerated electron-hole pairs during polishing. The WPECMP method enables wafers to achieve a damage-free surface/subsurface, with a lower surface roughness and higher surface flatness compared to the CMP technology.
Chemical mechanical polishing (CMP) remains the necessary polishing technology in chip manufacturing, but its applications on inert n-type gallium nitride (GaN) and carborundum (SiC) semiconductors are inefficient. Based on the mechanism of bipolar photoelectrochemistry, an efficient wireless photoelectrochemical mechanical polishing (WPECMP) method was proposed. The method applies a wireless electric field to the ultraviolet (UV) light-irradiated semiconductor wafer to separate photogenerated electron-hole pairs during polishing, rather than the traditional wire-connecting wafer to a power source. WPECMP is thus a universal polishing method for freestanding and semiconductor-on-insulator substrate wafers. The material removal rate (MRR) may reach similar to mu m h(-1) level because the unpaired holes oxidize the wafer to accelerate the material removal in the mechanical polishing process. An apparatus was devised to allow the wafer to alternate between oxidation and mechanical polishing, and the method was validated by finishing GaN wafers that are inert in CMP processing. The best MRR achieved 1.2 mu m h(-1), one order of magnetite higher than that of the CMP technology. The WPECMP method enables wafers to achieve a damage-free surface/subsurface, a surface roughness (Sa) of less than 0.082 nm in 5 x 5 mu m(2), and a surface flatness of less than 3.2 nm over 45 mm. The study opens a way to develop ultra-precision processing technologies with wireless electric field assistance.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据